Customized High Thermal Conductivity Aluminum Nitride (Aln) Ceramic Substrate
Product Highlights
Aluminum nitride (Aln) ceramic substrate is a next-generation material known for its exceptional thermal conductivity and excellent insulation properties. With the rising demand for efficient thermal management in high-power and high-density electronic applications, AlN has become a preferred choice for advanced LED packaging, large-scale integrated circuits, semiconductor modules, and power devices.
Key Features of Aluminum Nitride (Aln) Substrate:
Exceptional Thermal Conductivity
Offers high thermal conductivity ranging from 140 to 200 W/m·K, ensuring superior heat dissipation in demanding applications.Excellent Electrical Insulation
High dielectric strength and low dielectric constant make it ideal for use in electronic insulation environments.Low Thermal Expansion (CTE)
Its low coefficient of thermal expansion closely matches that of silicon and other semiconductor materials, minimizing thermal stress and enhancing long-term reliability.Outstanding Chemical Stability
Resistant to most acids and alkalis, providing strong chemical durability—excluding reactions with strong bases and hydrofluoric acid.Robust Mechanical Strength
Capable of withstanding high mechanical and thermal loads, making it suitable for harsh environments and high-performance applications.
Aluminum nitride substrate PerformanceIndex
Item | Unit | Reference Value | Test method |
Thermal conductivity | W/m・K | >170 | Transient plane source method |
Surface roughness | μm | <0.6 | Stylus surface roughness tester |
Warpage | / | <2.5‰ | Glass gauge |
Apparent density | g/cm3 | ≥3.26 | Drainage method |
Bending strength | Mpa | >300 | Three-point bending resistance method |
Volume resistance | Ω・cm | 1.5×1013 (TYP) | Volume resistance gauge |
Dielectric constant | @1MHz | 8.9 (TYP) | Impedance method |
Dielectric loss | @1MHz | 4.6×10-4(TYP) | Impedance method |
Break down voltage | Kv/mm | 36.85(TYP) | DC power method |
Coefficient of linear expansion | 1×10-6/℃ | 4.75(TYP) | Thermomechanical analysis |