Direct Bonded Copper (DBC) Alumina Ceramic SubstrateProduct Description
Warning/Disclaimer
This product has obtained relevant product qualifications/licenses for certain applicable countries.
Warning/Disclaimer
This product has obtained relevant product qualifications/licenses for certain applicable countries.
Video description
Products Description
DBCセラミック基板
DBC ceramic substrate is a high-performance material used in power electronics. It combines direct bonded copper (DBC) with a ceramic base, offering excellent thermal conductivity and electrical insulation. This substrate is ideal for applications requiring efficient heat dissipation, such as LED lighting and automotive modules. Its robust structure ensures reliability in demanding environments.
DBC ceramic substrate is a high-performance material used in power electronics. It combines direct bonded copper (DBC) with a ceramic base, offering excellent thermal conductivity and electrical insulation. This substrate is ideal for applications requiring efficient heat dissipation, such as LED lighting and automotive modules. Its robust structure ensures reliability in demanding environments.
According to your use conditions and requirements, custom hit samples and production.
Product Parameters And Specifications
ceramic
Item | Unit | Si3N4 | AlNの | ZTA | BeO |
Density | g/m³ | 3.2 | 3.3 | 4 | 3 |
Thermal Conductivity | W/m.K@25℃ | ≥80 | ≥170 | ≥27 | ≥250 |
Coefficient of Thermal Expansion | X10 -6 /K （20℃-300℃） | ≤2.6 | ≤4.3 | ≤7.5 | ≤9 |
Flexural Strength | MPa | ≥700 | ≥450 | ≥500 | ≥190 |
Dielectric Strength | KV/mm | ≥15 | ≥15 | ≥15 | ≥15 |
Dielectric Loss | 1MHz | 0.0003 | 0.0003 | 0.0003 | 0.0003 |
Dielectric Constant | 1MHz | 9 | 9 | 10.5 | 6.9 |
Volume Resistivity | Ω·cm@ 20 °C | 1014 | 1014 | 1014 | 1014 |
Young’s Modulus | Gpa | 320 | 320 | 310 | / |
Copper Sheet
Item | Unit | Performance |
Thickness | ミリメートル | 0.127/0.2/0.25/0.3/0.4/0.5/0.8 |
Oxygen Content | % | ≤0.001 |
Surface Hardness | HV3 | 90-120（Post-Copper Cladding：45-55） |
Conductivity | MS/m | 58.6 |
Standard Material Thickness Combinations
0.127ミリメートル | 0.2ミリメートル | 0.25ミリメートル | 0.3ミリメートル | 0.4ミリメートル | 0.5ミリメートル | 0.8ミリメートル | |
0.25ミリメートル | AlN/Si3N4 | AlN/Si3N4 | AlN/Si3N4 | AlN/Si3N4 | AlN/Si3N4 | AlN/Si3N4 | AlN/Si3N4 |
0.32ミリメートル | AlN/Si3N4/ZTA | AlN/Si3N4/ZTA | AlN/Si3N4/ZTA | AlN/Si3N4/ZTA | AlN/Si3N4/ZTA | AlN/Si3N4/ZTA | AlN/Si3N4/ZTA |
0.38ミリメートル | AlN/Si3N4/BeO | AlN/Si3N4/BeO | AlN/Si3N4/BeO | AlN/Si3N4/BeO | AlN/Si3N4/BeO | AlN/Si3N4/BeO | AlN/Si3N4/BeO |
0.635ミリメートル | AlN/Si3N4/BeO | AlN/Si3N4/BeO | AlN/Si3N4/BeO | AlN/Si3N4/BeO | AlN/Si3N4/BeO | AlN/Si3N4/BeO | AlN/Si3N4/BeO |
1.0ミリメートル | AlN/Si3N4/BeO | AlN/Si3N4/BeO | AlN/Si3N4/BeO | AlN/Si3N4/BeO | AlN/Si3N4/BeO | AlN/Si3N4/BeO | AlN/Si3N4/BeO |
2.0ミリメートル | AlN/Si3N4/BeO | AlN/Si3N4/BeO | AlN/Si3N4/BeO | AlN/Si3N4/BeO | AlN/Si3N4/BeO | AlN/Si3N4/BeO | AlN/Si3N4/BeO |
Direct Bonded Copper Ceramic Substrates Material Property:
– Low Thermal Expansion
– High Strength
– High Thermal Conductivity
– High Wettability for Solder
Direct Bonded Copper Ceramic Substrates Applied Area
– Power Electronics: IGBT, MOSFET, Thyristor Module, Solid-state Relay, Diode, Power Transistors
– Automotive: ABS, Power Steering, DC/DC Converter, LED Lighting, Ignition Control
– Home Appliance: Air Conditioner, Peltier Cooler
– Environmental Technology: Local Power Generation, Electric Vehicle, Traction Control System, Photovoltaic Units, Wind Power
– Industrial: LED Displays, Welding Machine
– Aerospace: Laser, Power Supply for Satellites and Aircrafts
– PC/IT: Power Supply, UPS System
